A statistical description of dislocation mobility at stresses close to the threshold of unlocking from the atmosphere of adsorbed impurities

A model is developed to describe the effect of impurities adsorbed by dislocation cores on the dislocation mobility in materials with a high potential relief (Peierls barriers). It is shown that the statistical fluctuations in the impurity distribution, which are due to the adsorption randomness, si...

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Bibliographic Details
Published in:Crystallography reports, Vol. 54, No. 6 (2009), p. 967-973
Main Author: Petukhov, V.
Format: electronic Article
Item Description:Original Russian Text © B.V. Petukhov, 2009, published in Kristallografiya, 2009, Vol. 54, No. 6, pp. 1016–1022. Dedicated to the memory of V.L. Indenbom
Physical Description:Online-Ressource
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