Progress in rectifying-based RRAM passive crossbar array

Resistive random access memory (RRAM) with crossbar structure is receiving widespread attentions due to its simple structure, high density, and feasibility of three-dimensional (3D) stack. It is an extremely promising solution for high density storage. However, a major issue of crosstalk restricts i...

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Bibliographic Details
Published in:Science China Technological Sciences, Vol. 54, No. 4 (2011), p. 811-818
Main Author: Zhang, KangWei
Other Involved Persons: Long, ShiBing ; Liu, Qi ; Lü, HangBing ; Li, YingTao ; Wang, Yan ; Lian, WenTai ; Wang, Ming ; Zhang, Sen ; Liu, Ming
Format: electronic Article
Physical Description:Online-Ressource
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