Electrical conduction of erbium fluoride thin films

Thin-film capacitors of erbium fluoride were fabricated by electron beam gun deposition. The current-voltage characteristics of the erbium fluoride films were studied in the temperature range 323 to 396 K. For sufficiently high electric fields (>104 V cm−1), the leakage current increases exponent...

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Bibliographic Details
Published in:Journal of Materials Science : Full Set - Includes `Journal of Materials Science Letters', Vol. 19, No. 7 (1984), p. 2401-2404
Main Author: Ramanujam, R.
Other Involved Persons: Radhakrishnan, M. ; Balasubramanian, C.
Format: electronic Article
Language:English
ISSN:1573-4803
Physical Description:Online-Ressource
DOI:10.1007/BF01058118
Subjects:
Further Information:Volltext
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