Evidence for selective resputtering as the growth mechanism of pair-order anisotropy in amorphous TbFe films
Processing conditions for rf magnetron sputter-deposited amorphous TbFe films in which an atomic scale structural anisotropy (ASSA) results as a natural consequence of selective resputtering at the film surface during growth are presented. The ASSA, measured using polarization-dependent X-ray absorp...
|Published in:||Bulletin of Materials Science : Published by the Indian Academy of Sciences, Vol. 22, No. 3 (1999), p. 503-508|
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Bulletin of Materials Science : Published by the Indian Academy of Sciences, Vol. 22, No. 3 (1999), p. 503-508