Nanoporous Ge thin film production combining Ge sputtering and dopant implantation

In this work a novel process allowing for the production of nanoporous Ge thin films is presented. This process uses the combination of two techniques: Ge sputtering on SiO2 and dopant ion implantation. The process entails four successive steps: (i) Ge sputtering on SiO2, (ii) implantation preanneal...

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Bibliographic Details
Published in:Beilstein journal of nanotechnology, Vol. 6 (2015), p. 336-42
Main Author: Toinin, Jacques Perrin (Author)
Other Involved Persons: Portavoce, Alain ; Hoummada, Khalid ; Texier, Michaël ; Bertoglio, Maxime ; Bernardini, Sandrine ; Abbarchi, Marco ; Chow, Lee
Format: electronic Article
Language:English
ISSN:2190-4286
Item Description:Date Completed 30.03.2015
Date Revised 13.11.2018
published: Electronic-eCollection
Citation Status PubMed-not-MEDLINE
Copyright: From MEDLINE®/PubMed®, a database of the U.S. National Library of Medicine
Physical Description:Online-Ressource
DOI:10.3762/bjnano.6.32
Subjects:
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